Blank Cover Image

Carriers Mobility Extraction Methods for Triple-gate FinFET

Author(s):
Publication title:
Microelectonics Technology and Devices - SBMicro 2008
Title of ser.:
ECS transactions
Ser. no.:
14(1)
Pub. Year:
2008
Page(from):
283
Page(to):
292
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776462 [1566776465]
Language:
English
Call no.:
E23400/14-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Triple Gate FinFET Parameter Extraction Using High Frequency Capacitance - Voltage Curves

M. Rodrigues, V. Sonnenberg, J. A. Martino

Electrochemical Society
7 Conference Proceedings Temperature Influences on FinFETs with Undoped Body

M. A. Pavanello, J. A. Martino, E. Simoen, R. Rocyackers, N. Collaert, C. Claeys

Electrochemical Society
2 Conference Proceedings Non-Vertical Sidewall Angle Influence on Triple-Gate FinFETs Corner Effects

R. Giacomini, J. A. Martino

Electrochemical Society
8 Conference Proceedings Simple Method to Extract the length Dependent Mobility Degradation Factor at 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
3 Conference Proceedings Corner Effect on Capacitance-Voltage Curves in Triple Gate FinFET

M. Rodrigues, V. Sonnenberg, J.A. Martino

Electrochemical Society
9 Conference Proceedings An Improved Current Model in Saturation for Trapezoidal Finfets

G.P. Martins, R.C. Giacomini, J.A. Martino

Electrochemical Society
4 Conference Proceedings Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective

M. A. Pavanello, J. A. Martino, E. Simoen, R. Rooyackers, N. Collaert, C. Claeys

Electrochemical Society
10 Conference Proceedings Influence of the N-Type FinFET Width on the Zero Temperature Coefficient

M. Bellodi, J. A. Martino, L. M. Camiio, E. Simoen, C. Claeys

Electrochemical Society
5 Conference Proceedings Evaluation of Triple-Gate Finfets with High-k Dielectrics and TiN Gate Material Under Analog Operation

Marcelo Pavanello, Joao Martino, Eddy Simoen, Rita Rooyackers, Nadine Collaert, Cor Claeys

Electrochemical Society
11 Conference Proceedings Simple Analytical Model to Study the ZTC Bias Point in FinFETs

M. Bellodi, L. Camillo, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
6 Conference Proceedings Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

dos Santos, C. D. G., Pavanello, M. A., Martino, J. A., Flandre, D., Raskin, J.-P.

Electrochemical Society
12 Conference Proceedings A Simple Method to Model Nonrectangular-Gate Layout in SOI MOSFETs

Giacomini, R., Martino, J. A.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12