Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs

Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs

Author(s):

Publication title:

Microelectonics Technology and Devices - SBMicro 2008

Title of ser.:

ECS transactions

Ser. no.:

14(1)

Pub. Year:

2008

Page(from):

253

Page(to):

261

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776462 [1566776465]

Language:

English

Call no.:

E23400/14-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013290
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Microelectronics Technology and Devices
Conf. info. (Number):	23rd
Conf. info. (Venue):	Gramado, Brazil
Conf. info. (Date):	2008.09.01-2008.09.04
Note for article:	23rd Symposium on Microelectronics Technology and Devices, September 1 - September 4, 2008, Gramado, Brazil

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