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Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

Author(s):
Publication title:
Microelectonics Technology and Devices - SBMicro 2008
Title of ser.:
ECS transactions
Ser. no.:
14(1)
Pub. date:
2008
Page(from):
243
Page(to):
252
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776462 [1566776465]
Language:
English
Call no.:
E23400/14-1
Type:
Conference Proceedings

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