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Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

Author(s):
Publication title:
2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT)
Title of ser.:
ECS transactions
Ser. no.:
8(1)
Pub. Year:
2007
Page(from):
71
Page(to):
75
Pages:
5
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781604238921 [1604238925]
Language:
English
Call no.:
E23400/8-1
Type:
Conference Proceedings

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