Etching Rate Enhancement of Copper by Adding Sulfur Compounds in Chemical-Mechanical Polishing Slurries

Etching Rate Enhancement of Copper by Adding Sulfur Compounds in Chemical-Mechanical Polishing Slurries

Author(s):

Publication title:

Electrochemical Processing in ULSI and MEMS 3

Title of ser.:

ECS transactions

Ser. no.:

6(8)

Pub. Year:

2007

Page(from):

65

Page(to):

75

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781604238846 [1604238844]

Language:

English

Call no.:

E23400/6-5 [8]

Type:

Conference Proceedings

Details

TDL ID:	ZA00013295
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	211th
Conf. info. (Venue):	Chicago, Illinois, USA
Conf. info. (Date):	2007.05.06-2007.05.10
Note for article:	211th ECS Meeting, May 6-May 10, 2007, Chicago, Illinois

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