Tuning the Removal Rate of Carbon Doped Oxide during Chemical Mechanical Polishing

Tuning the Removal Rate of Carbon Doped Oxide during Chemical Mechanical Polishing

Author(s):

Publication title:

Chemical Mechanical Polishing 8

Title of ser.:

ECS transactions

Ser. no.:

3(41)

Pub. Year:

2007

Page(from):

73

Page(to):

79

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781605601687 [1605601683]

Language:

English

Call no.:

E23400/3-39 [41]

Type:

Conference Proceedings

Details

TDL ID:	ZA00046573
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Removal Rate, Uniformity and Defectivity Studies Of Chemical Mechanical Polishing of BPSG Films Bonner, B.A., Fishkin, B., David, J., Garretson, C., Osterheld, T.H. Materials Research Society	7 Conference Proceedings *CHEMICAL MECHANICAL POLISHING OF INTERLEVEL DIELECTRICS: MODELS FOR REMOVAL RATE AND PLANARITY Sivaram,. S., Tolles, R., Bath, H., Lee, E., Leggett Materials Research Society
2 Conference Proceedings Modeling of the removal rate in chemical mechanical polishing Nguyen,V.H., Shi,F.G. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films Bonner, Benjamin A., Fishkin, Boris, David, Jeffrey, Garretson, Chad, Osterheld, Thomas H. Materials Research Society
3 Conference Proceedings Mechanisms of Copper Removal during Chemical Mechanical Polishing flu, T, Desai, V., Ta, D., Cliathapuram, nboli; V., Sundaram, K.B. Electrochemical Society	9 Conference Proceedings Chemical Mechanical Polishing of Amorphous Silicon Carbide and Low-k Carbon Doped Oxide Films Block, K.M., Chen, W., Gray, W.D. Electrochemical Society
4 Conference Proceedings Pattern Dependent Polish Rate Behavior in Oxide Chemical Mechanical Polishing Scott Lawing, A., Merchant, Tushar Electrochemical Society	10 Conference Proceedings EFFECT OF WAFER TYPES ON THE CHEMICAL MECHANICAL POLISHING RATE OF SILICON DIOXIDE LIU, ZHENDONG, SCHMIDT, ROBERT, LI, HUGH Electrochemical Society
5 Conference Proceedings Copper Removal from Chemical Mechanical Polishing Effluent Riley, C., Filson, J., Mendicino, L., Brown, P.T. Electrochemical Society	11 Conference Proceedings Effect of Added Surfactant on Oxide to Polysilicon Selectivity During Chemical Mechanical Polishing Lee, Jae-Dong, Park, Young-Rae, Yoon, Bo Un, Rah, SangRok, Moon, Joo-Tae Electrochemical Society
6 Conference Proceedings Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001) J.H. An, G.S. Lee, W.J. Lee, B.C. Shin, J.D. Seo Trans Tech Publications	12 Conference Proceedings Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Su, J. X., Guo, D. M., Kang, R. K., Jin, Z. J., Li, X. J., Tian, Y. B. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12