Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD
- Author(s):
- Publication title:
- Solid-State Joint Session (General)
- Title of ser.:
- ECS transactions
- Ser. no.:
- 3(33)
- Pub. Year:
- 2007
- Page(from):
- 31
- Page(to):
- 34
- Pages:
- 4
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781604239102 [1604239107]
- Language:
- English
- Call no.:
- E23400/3-30 [33]
- Type:
- Conference Proceedings
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