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Selective Epitaxial Growth of Arsenic-Doped SiGe Structures with LPCVD

Author(s):
Publication title:
Solid-State Posters (General)
Title of ser.:
ECS transactions
Ser. no.:
1(30)
Pub. Year:
2006
Page(from):
33
Page(to):
40
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774826 [1566774829]
Language:
English
Call no.:
E23400/1-26 [30]
Type:
Conference Proceedings

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