Nano-Crystalline Grained Silicon Formed by Rapid Thermal Chemical Vapor Deposition for Advanced Gate Electrode Application

Nano-Crystalline Grained Silicon Formed by Rapid Thermal Chemical Vapor Deposition for Advanced Gate Electrode Application

Author(s):

Publication title:

Thermal and Plasma CVD of Nanostructures

Title of ser.:

ECS transactions

Ser. no.:

1(29)

Pub. Year:

2006

Page(from):

1

Page(to):

9

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774819 [1566774810]

Language:

English

Call no.:

E23400/1-26 [29]

Type:

Conference Proceedings

Details

TDL ID:	ZA00053417
Series ID:	PA00000034
Conf. info. (Name):	ECS meeting
Conf. info. (Number):	208th
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21
Note for article:	208th ECS Meeting, October 16-October 21, 2005, Los Angeles, California

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