Effect of Prebonding Surface Treatments on Si-Si Direct Bonding : Bonding Void Decrease

Effect of Prebonding Surface Treatments on Si-Si Direct Bonding : Bonding Void Decrease

Author(s):

Publication title:

Semiconductor wafer bonding 9 : science, technology, and applications

Title of ser.:

ECS transactions

Ser. no.:

3(6)

Pub. Year:

2006

Page(from):

239

Page(to):

248

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775069 [156677506X]

Language:

English

Call no.:

E23400/3-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00047114
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Semiconductor Wafer Bonding ; Fall Meeting of the Electrochemical Society
Conf. info. (Number):	9th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.00.00
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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