High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

Author(s):

Publication title:

Chemical Sensors 7 and MEMS/NEMS 7

Title of ser.:

ECS transactions

Ser. no.:

3(10)

Pub. Year:

2006

Page(from):

291

Page(to):

298

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775106 [1566775108]

Language:

English

Call no.:

E23400/3-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047118
Series ID:	PA00000034
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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