High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

Author(s):

Publication title:

Thin Film Transistor Technology 8

Title of ser.:

ECS transactions

Ser. no.:

3(8)

Pub. Year:

2006

Page(from):

143

Page(to):

148

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775083 [1566775086]

Language:

English

Call no.:

E23400/3-8

Type:

Conference Proceedings

Details

TDL ID:	ZA00047116
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Thin Film Transistor Technologies - TFT
Conf. info. (Number):	8th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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