Blank Cover Image

Room-Temperature Sputter-Deposited Gate SiO2 Films for High Quality Poly-Si TFTs

Author(s):
Publication title:
Thin Film Transistor Technology 8
Title of ser.:
ECS transactions
Ser. no.:
3(8)
Pub. Year:
2006
Page(from):
107
Page(to):
112
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775083 [1566775086]
Language:
English
Call no.:
E23400/3-8
Type:
Conference Proceedings

Similar Items:

Serikawa, T., Miyashita, M., Uraoka, Y., Fuyuki, T.

Electrochemical Society

Suyama, Shiro, Okamoto, Akio, Shirai,m Seiiti, Serika, Tadashi

Materials Research Society

Serikawa,T.

Trans Tech Publications

T. Pan, T. Wu, C. Chan, K. Chen, C. Lee

Electrochemical Society

Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T.

Trans Tech Publications

A. Chanthaphan, Y.H. Cheng, T. Hosoi, T. Shimura, H. Watanabe

Trans Tech Publications

Okamoto, Akio, Shirai, Seiiti, Suyama, Shiro, Serikawa, Tadashi

Materials Research Society

Okumura, F., Yuda, K.

Electrochemical Society

Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki

Electrochemical Society

C. Li, L. Shu, L.J. He, X.Z. Liu

Trans Tech Publications

A. Mimura, T. Nakamura, Y. Sugawara, Y. Uraoka, I. Shuu

Electrochemical Society

Fukuda, H., Sakamoto, K., Nagai, K., Sekigawa, T., Yoshida, S., Arai, K.

MRS-Materials Research Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12