Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.
- Author(s):
- Publication title:
- SiGe and Ge, materials, processing, and devices
- Title of ser.:
- ECS transactions
- Ser. no.:
- 3(7)
- Pub. Year:
- 2006
- Page(from):
- 745
- Page(to):
- 757
- Pages:
- 13
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775076 [1566775078]
- Language:
- English
- Call no.:
- E23400/3-7
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Kluwer Academic Publishers |
Trans Tech Publications |
11
Conference Proceedings
Electronic structures of shallow acceptors confined in Si/SiGe quantum well structures
MRS-Materials Research Society |
6
Conference Proceedings
Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures
Trans Tech Publications |
Trans Tech Publications |