High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS
- Author(s):
- Publication title:
- SiGe and Ge, materials, processing, and devices
- Title of ser.:
- ECS transactions
- Ser. no.:
- 3(7)
- Pub. Year:
- 2006
- Page(from):
- 679
- Page(to):
- 686
- Pages:
- 8
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775076 [1566775078]
- Language:
- English
- Call no.:
- E23400/3-7
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures
Electrochemical Society |
2
Conference Proceedings
(8.6) 5:55 - 6:15 PM Strained-Silcon / Silicbn- Germanium-on-Insulator for High Peformance CMOS - A Manufacturable Process for 300 MM Substrates
Electrochemical Society |
8
Conference Proceedings
Strained Si-on-Insulator Fabricated From Elastically-Relaxed Si/SiGe Structures
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
10
Conference Proceedings
The Development of Ultra-Fine High Performance Low Carbon Bainitic Structural Steel
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
6
Conference Proceedings
Critical issues in SiGe on thin film silicon on sapphire for high performance room temperature CMOS technology
Electrochemical Society |
Electrochemical Society |