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The Effect of a Threshold Failure Time on Electromigration Behavior of Copper Interconnects

Author(s):
Publication title:
Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Inter-level Dielectrics, at 214th ECS Meeting, October 12-17, 2008, Honolulu, Hawaii, USA
Title of ser.:
ECS transactions
Ser. no.:
16(19)
Pub. Year:
2009
Page(from):
31
Page(to):
39
Pages:
9
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781615672936 [1615672931]
Language:
English
Call no.:
E23400/16-17 [19]
Type:
Conference Proceedings

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