Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

1089

Page(to):

1094

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings SiGe HBT/CMOS Technology for RF and High-Speed Digital Applications* Washio, K. Electrochemical Society	7 Conference Proceedings Low-Power, High Speed Sb-based HEMTs and HBTs Mango, R., Boos, J. B., Campbell, P. M., Bennet, B. R., Glasser, E. R., Tinkham, B. P., Ancona, M. G., Hobart, K. D., … Electrochemical Society
2 Conference Proceedings SiGe HBT/BiCMOS Technologies and their Applications to Communication ICs/LSIs Oda, Katsuya, Washio, Katsuyoshi, Hashimoto, Takashi Materials Research Society	8 Conference Proceedings Pushing the Performance Limits of SiGe HBT Technology M.H. Khater, T. Adam, J. Rieh, K. Schonenberg, F. Pagette Electrochemical Society
3 Conference Proceedings INVITED: Si AND SiGe SELECTIVE EPITAXIAL GROWTH BY UHV-CVD Tatsumi, T., Aoyama, K. Electrochemical Society	9 Conference Proceedings Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor Hasegawa, M., Miyauchi, A., Masahara, K., Ishida, Y., Takahashi, T., Ohno, T., Nishio, J., Suzuki, T., Tanaka, T., … Trans Tech Publications
4 Conference Proceedings Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer J. Nakatsuru, H. Date, S. Mashiro, M. Ikemoto Electrochemical Society	10 Conference Proceedings Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor Hasegawa, M., Miyauchi, A., Masahara, K., Ishida, Y., Takahashi, T., Ohno, T., Nishio, J., Suzuki, T., Tanaka, T., … Trans Tech Publications
5 Conference Proceedings Low-Temperature Modeling of SiGe HBTs Using SCORPIO Richey, D.M., Cressler, J.D., Joseph, A.J., Jaeger, R.C. Electrochemical Society	11 Conference Proceedings High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor Masahara, K., Takahashi, T., Kushibe, M., Ohno, T., Nishio, J., Kojima, K., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications
6 Conference Proceedings High quality SOI using thin epitaxial Al2O3 on Si for quantum device application Jung, Y.C., Ohtani, K., Miura, H., Ishida, M. Electrochemical Society	12 Conference Proceedings High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor Masahara, K., Takahashi, T., Kushibe, M., Ohno, T., Nishio, J., Kojima, K., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12