SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

1001

Page(to):

1013

Pages:

13

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices M. Bauer, D. Weeks, Y. Zhang, V. Machkaoutsan Electrochemical Society	7 Conference Proceedings Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs Unnikrishnan,S., Kim,B.Y., Wang,C.-L., Wu,Y.-K., Kwong,D.-L., Tasch,A.F. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices M. Bauer, Y. Zhang, D. Weeks, V. Machkaoutsan, S. Thomas Electrochemical Society	8 Conference Proceedings Investigation of Drain Current Saturation in 4H-SiC MOSFETs G. Pennington, S. Potbhare, N. Goldsman, D. Habersat, A. Lelis, J.M. McGarrity, C. Ashman Trans Tech Publications
3 Conference Proceedings Throughput Considerations for In-Situ Doped Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices M. Bauer, Y. Zhang, D. Weeks, P. Brabant, J. Italiano Electrochemical Society	9 Conference Proceedings INTERFACIAL TUNNEL STRUCTURES IN CMOS SOURCE/DRAIN REGIONS FOLLOWING SELECTIVE DEPOSITION OF TUNGSTEN DeBlasi, J.M., Sadana, D.K., Norcott, M.H. Materials Research Society
4 Conference Proceedings Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions M. B. Gonzalez, M. Chowdhury, N. Bhouri, P. Verheyen, F. Leys, O. Richard, R. Loo, C. Claeys, B. Simoen, V. … Electrochemical Society	10 Conference Proceedings A 0.18 μm CMOS Technology for Elevated Source/Drain MOSFETs Using Selective Silicon Epitaxy Srivastava, A., Sun, J., Bellur, K., Bartholomew, R., O'Neil, P., Celik, M., Osburn, C.M., Masnari, N.A., OEztuerk, … Electrochemical Society
5 Conference Proceedings In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains J. Hartmann, A. Papon, J.M. Fabbri, G. Rolland, T. Billon Electrochemical Society	11 Conference Proceedings Sub-Half Micron Elevated Source/Drain NMOSFETS by Low Temperature Selective Epitaxial Deposition Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., Ozturk, M. C., Osburn, C. M., … MRS - Materials Research Society
6 Conference Proceedings Selective Epitaxial Si and SiGe for Elevated Source Drain MOSFETs Taylor, W.J, Tobin, P.J Electrochemical Society	12 Conference Proceedings Effectiveness of Si Seed for Selective SiGe Epitaxial Deposition in Recessed Source and Drain for Locally Strained pMOS Application P. Cheng, C. Liao, H. Wu, Y. Chen, C. Chien Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12