Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications

Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

923

Page(to):

934

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making Huang,W.-S., Kwong,R.W., Moreau,W.M., Lang,R., Robinson,C.F., Medeiros,D.R., Petrillo,K.E., Aviram,A., Mahorowala,A.P., … SPIE-The International Society for Optical Engineering	7 Conference Proceedings DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS Guillaumot, B., Ducroquet, F., Ernst, T., Guegan, G., Galon, C., Renard, C., PrevitaIi, B., Rivoire, M., Nier, M.E., … Electrochemical Society
2 Conference Proceedings Device Challenges for Sub-150 nm CMOS* Woo, J.C.S. Electrochemical Society	8 Conference Proceedings DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS Guillaumot, B., Ducroquet, F., Ernst, T., Guegan, G., Galon, C., Renard, C., PrevitaIi, B., Rivoire, M., Nier, M.E., … Electrochemical Society
3 Conference Proceedings Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM Kim,Y.-C., Vandenberghe,G.N., Verhaegen,S., Ronse,K. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization A. Hubert, J.-P. Colonna, S. Bécu, C. Dupré, V. Maffini-Alvaro Electrochemical Society
4 Conference Proceedings High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making Huang,W.-S., Kwong,R.W., Moreau,W.M., Lang,R., Robinson,C.F., Medeiros,D.R., Petrillo,K.E., Aviram,A., Mahorowala,A.P., … SPIE-The International Society for Optical Engineering	10 Conference Proceedings Gate-All-Around Silicon Nanowire Devices: Are These the Future of CMOS? G. Lo, N. Singh, S. Rustagi, K.D. Buddharaju, N. Balasubramanian Electrochemical Society
5 Conference Proceedings Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Sil-yCy Channels F. Ducroquet, J. Hartmann, C. Tabone, D. Lafond, C. Vizioz, T. P. Ernst, S. Deleonibus Electrochemical Society	11 Conference Proceedings High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides Klemens, F.P., Baumann, F.H., Kornblit, A., Layadi, N., Lee, H., Maynard, H.L., Mytych, J.M., Sorch, T.W., Tennant, … Electrochemical Society
6 Conference Proceedings Gate-Length-and threshold-voltage-dependent nonlinearity in the hot carrier DC Lifetime extrapolation for sub-100-nm NMOS devices Chheda,S.N., Bhat,N., Tsui,P., Gonzales,S., Cave,N., Fu,C.-C., Huang,F., Nangia,A., Choi,P.S.-J., Collins,S. SPIE - The International Society for Optical Engineering	12 Conference Proceedings The advanced mask CD MTT control using dry etch process for sub 65 nm tech S. J. Jo, H. Y. Jung, D. W. Lee, J. C. Shin, J. Y. Jun Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12