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Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Thin Buffer Layer Strained-Si/SiGe Heterostructures

Author(s):
Publication title:
SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
Title of ser.:
ECS transactions
Ser. no.:
16(10)
Pub. Year:
2008
Page(from):
293
Page(to):
298
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776561 [1566776562]
Language:
English
Call no.:
E23400/16-10
Type:
Conference Proceedings

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