Temperature-dependent Operation of Ge on Si p-i-n Photodetectors
- Author(s):
- Publication title:
- SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
- Title of ser.:
- ECS transactions
- Ser. no.:
- 16(10)
- Pub. Year:
- 2008
- Page(from):
- 233
- Page(to):
- 235
- Pages:
- 3
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566776561 [1566776562]
- Language:
- English
- Call no.:
- E23400/16-10
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors
SPIE - The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
(9.2) 10:40 - 11:10 AM - Si-Based Near-Infrared Detection and Emission: Highlights From the (Uncompleted) Trail Towards Monolithic Integration with CMOS …
Electrochemical Society |
3
Conference Proceedings
Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics
SPIE-The International Society for Optical Engineering |
9
Conference Proceedings
Polycrystalline Ge detectors integrated on SOI waveguide: device modeling and experimental results
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |