Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing
- Author(s):
- Publication title:
- SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
- Title of ser.:
- ECS transactions
- Ser. no.:
- 16(10)
- Pub. Year:
- 2008
- Page(from):
- 223
- Page(to):
- 227
- Pages:
- 5
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566776561 [1566776562]
- Language:
- English
- Call no.:
- E23400/16-10
- Type:
- Conference Proceedings
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