Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer

Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

91

Page(to):

100

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

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