Ba0.6Sr0.4TiO3 Thin Films used as Gate Dielectric in Pentacene Transistors

Ba0.6Sr0.4TiO3 Thin Films used as Gate Dielectric in Pentacene Transistors

Author(s):

Publication title:

Thin Film Transistors 9

Title of ser.:

ECS transactions

Ser. no.:

16(9)

Pub. Year:

2008

Page(from):

291

Page(to):

294

Pages:

4

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776554 [1566776554]

Language:

English

Call no.:

E23400/16-9

Type:

Conference Proceedings

Details

TDL ID:	ZA00047172
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Thin Film Transistor Technologies (TFT 9)
Conf. info. (Number):	9th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.13-2008.10.16
Note for article:	Symposium on Thin Film Transistor Technologies

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