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Mechanisms of Polycrystalline Growth of SiGe in Thermal CVD Processes using Si2H6 and GeF4

Author(s):
Publication title:
Thin Film Transistors 9
Title of ser.:
ECS transactions
Ser. no.:
16(9)
Pub. Year:
2008
Page(from):
131
Page(to):
136
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776554 [1566776554]
Language:
English
Call no.:
E23400/16-9
Type:
Conference Proceedings

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