Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding

Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding

Author(s):

Publication title:

Semiconductor Wafer Bonding 10: Science, Technology, and Applications

Title of ser.:

ECS transactions

Ser. no.:

16(8)

Pub. Year:

2008

Page(from):

525

Page(to):

530

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776547 [1566776546]

Language:

English

Call no.:

E23400/16-8

Type:

Conference Proceedings

Details

TDL ID:	ZA00047171
Series ID:	PA00000034
Conf. info. (Name):	Pacific Rim Meeting, PRiME ; Meeting of ECS-The Electrochemical Society ; Fall Meeting of The Electrochemical Society of Japan
Conf. info. (Number):	2008 ; 214th ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.14-2008.10.16
Note for article:	Pacific Rim Meeting, PRiME 2008: joint International Meeting of the 214th Meeting of ECS-The Electrochemical Society, and the 2008 Fall Meeting of The Electrochemical Society of Japan

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