Effect of Laser Sources on the Structural Damage Mechanisms and Reverse-bias Leakages of Laser Lift-off GaN-based LEDs

Effect of Laser Sources on the Structural Damage Mechanisms and Reverse-bias Leakages of Laser Lift-off GaN-based LEDs

Author(s):

Publication title:

State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) and Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9

Title of ser.:

ECS transactions

Ser. no.:

16(7)

Pub. Year:

2008

Page(from):

123

Page(to):

125

Pages:

3

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776530 [1566776538]

Language:

English

Call no.:

E23400/16-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047170
Series ID:	PA00000034
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductor (SOTAPOCS 49) symposium ; Symposium Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics ; Meeting of The Electrochemical Society
Conf. info. (Number):	49th ; 9th ; 214th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	49th State-of-the-Art Program on Compound Semiconductor (SOTAPOCS 49) symposium and the 9th Symposium Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics were held at the 214th Meeting of The Electrochemical Society, on october 12-17, 2008 in Honolulu, Hawaii, USA

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