The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers

The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers

Author(s):

Publication title:

High Purity Silicon 10

Title of ser.:

ECS transactions

Ser. no.:

16(6)

Pub. Year:

2008

Page(from):

207

Page(to):

218

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776523 [156677652X]

Language:

English

Call no.:

E23400/16-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00052896
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	10th ; 214th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	10th International Symposium on High Purity Silicon, 214th ECS Meeting, Honolulu, HI, October 12 - October 17, 2008

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