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Ab-Initio Modeling of Point Defects, Impurities and Diffusion in Silicon

Author(s):
W. Windl  
Publication title:
High Purity Silicon 10
Title of ser.:
ECS transactions
Ser. no.:
16(6)
Pub. Year:
2008
Page(from):
89
Page(to):
96
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776523 [156677652X]
Language:
English
Call no.:
E23400/16-6
Type:
Conference Proceedings

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