Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors

Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 6

Title of ser.:

ECS transactions

Ser. no.:

16(5)

Pub. Year:

2008

Page(from):

479

Page(to):

486

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

Language:

English

Call no.:

E23400/16-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00049541
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	6th ; 214th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008

Similar Items:

1 Conference Proceedings Thermodynamics and Kinetics for Suppression of GeO Desorption by High Pressure Oxidation of Ge Kosuke Nagashio, C. H. Lee, T. Nishimura, K. Kita, A. Toriumi Materials Research Society	7 Conference Proceedings Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric Y. Zhao, K. Kita, K. Kyuno, A. Toriumi Electrochemical Society
2 Conference Proceedings Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks K. Kita, C. Lee, T. Nishimura, K. Nagashio, A. Toriumi Electrochemical Society	8 Conference Proceedings Far- and Mid-Infrared Absorption Study of HfO2/SiO2/Si System Toriumi, A., Tomida, K., Shimizu, H., Kita, K., Kyuno, K. Electrochemical Society
3 Conference Proceedings Impact of Dielectric Material Selection on Electrical Characteristics of High-k/Ge Devices K. Kita, H. Nomura, T. Nishimura, A. Toriumi Electrochemical Society	9 Conference Proceedings Characterization of MIS Capacitor of BST Thin Films Deposited on Si by RF Magnetron Sputtering Paek, S. H., Park, C. S., Won, J. H., Lee, K. S. MRS - Materials Research Society
4 Conference Proceedings Charge Trapping Characteristics of W-La₂O₃-nSi MIS Capacitors After Post-Metallization Annealing PMA in N2 J. Molina, K. Tachi, K. Kakushima, P. Abmet, K. Tsutsui, N. Sugli, T. Hattori, I. Hiroshi Electrochemical Society	10 Conference Proceedings X-Ray Diffraction of a Stage-2 Graphite-bromine Intercalation Compound at High Pressure Matsuzaki,S., Toriumi,K., Sano,M. Trans Tech Publications
5 Conference Proceedings Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura Electrochemical Society	11 Conference Proceedings MIS Structures Based on Low Pressure Chemical Vapour Deposited Y2O3 Gate Dielectric on Si For High Density DRAMs Rastogi,A.C., Sharma,R.N. SPIE - The International Society for Optical Engineering
6 Conference Proceedings Doped HfO₂ fur Higher-k Dielectrics A. Toriumi, K. Kita, K. Tomida, Y. Yamamoto Electrochemical Society	12 Conference Proceedings Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing … C.M. Lee, A. Park, S.Y. Park, M.W. Park Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12