Organic Mask Removal Assessment for 32nm Fully Depleted SOI Technology with TiN-metal Gate on HfO2

Organic Mask Removal Assessment for 32nm Fully Depleted SOI Technology with TiN-metal Gate on HfO2

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 6

Title of ser.:

ECS transactions

Ser. no.:

16(5)

Pub. Year:

2008

Page(from):

355

Page(to):

361

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

Language:

English

Call no.:

E23400/16-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00049541
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	6th ; 214th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008

Similar Items:

1 Conference Proceedings Resist Stripping Process on Germanium: a Basic Post-Implant Study L. Lachal, J. Chiaroni, C. Le Rayer, F. Ritton, R. Manfredonia, F. Perrin Electrochemical Society	7 Conference Proceedings Fully depleted SOI process and device technology for digital and RF application Ichikawa, F., Nagatomo, Y., Katakura, Y., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S. Electrochemical Society
2 Conference Proceedings Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime Dreeskornfeld, L., Hartwich, J., Landgraf, E., Luyken, R.J., Roesner, W., Schulz, T., Staedele, M., Schmitt-Landsiedel, … Electrochemical Society	8 Conference Proceedings Fully Depleted SOI Process and Device Technology for Digital and RF Applications* Ichikawa, F., Nagatomo, V., Katakura, V., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S. Electrochemical Society
3 Conference Proceedings Temperature dependence of drain-induced barrier lowering in fully depleted SOI MOSFETs Jomaah, J, Ghibaudo, G, Pelloie, J L, Balestra, F Electrochemical Society	9 Conference Proceedings A Combinatorial Study of Metal Gate/HfO₂ MOSCAPS M. L. Green, K. Chang, I. Takeuchi, T. Chikyow Electrochemical Society
4 Conference Proceedings Physical and electrical properties of fully-depleted SOI devices Pelloie, J.L., Sun, Y.S. Electrochemical Society	10 Conference Proceedings Towards 0.5 nm EOT Scaling of HfO2/Metal Electrode Gate Stacks Peterson, J. J., Brown, G. A., Matthews, K., Gutt, J., Gopalan, S., Li, H. -J., Kirsch, P., Barnett, J., Moumen, N., … Electrochemical Society
5 Conference Proceedings INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS Hergenrother, J.M., Nigani, T., Wilk, O.D., Klemens, F.P., Monroe, D., Sorsch, T.W., Busch, B., Green, M.L., Muller, … Electrochemical Society	11 Conference Proceedings Evaluation Of Candidate Metals For Dual-Metal Gate Cmos With Hfo_2 Gate Dielectric Samavedam, S.B., Schaeffer, J.K., Gilmer, D.C., Dhandapani, V., Tobin, P.J., Mogab, J., Nguyen, B-Y., Dakshina-Murthy, … Materials Research Society
6 Conference Proceedings INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS Hergenrother, J.M., Nigani, T., Wilk, O.D., Klemens, F.P., Monroe, D., Sorsch, T.W., Busch, B., Green, M.L., Muller, … Electrochemical Society	12 Conference Proceedings Applications of CPL mask technology for sub-65nm gate imaging Litt, L. C., Conley, W., Wu, W., Peters, R., Parker, C., Cobb, J., Kasprowicz, B. S., van den Broeke, D., Park, J. C., … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12