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Inversion Layer Mobility in High-κ Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-κ/SiO2 Interface

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics 6
Title of ser.:
ECS transactions
Ser. no.:
16(5)
Pub. Year:
2008
Page(from):
67
Page(to):
75
Pages:
9
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776516 [1566776511]
Language:
English
Call no.:
E23400/16-5
Type:
Conference Proceedings

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