ALD La-Based Oxides for Vt-Tuning in High-Κ/Metal Gate Stacks

ALD La-Based Oxides for Vt-Tuning in High-Κ/Metal Gate Stacks

Author(s):

Publication title:

Atomic layer deposition applications 3

Title of ser.:

ECS transactions

Ser. no.:

11(7)

Pub. Year:

2007

Page(from):

201

Page(to):

211

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775731 [1566775736]

Language:

English

Call no.:

E23400/11-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00052897
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.08-2007.10.09
Note for article:	3rd Symposium on Atomic Layer Deposition Applications, 212th Meeting of the Electrochemical Society, Hilton Washington, Washington, DC, October 8-9, 2007

Similar Items:

1 Conference Proceedings Impact of Hf-Precursor Choice on Scaling and Performance of High-κ Gate Dielectrics J. Maes, Y. Fedorenko, A. Delabie, L. Ragnarsson, J. Swerts Electrochemical Society	7 Conference Proceedings Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks V. Misra, R. Jha, B. Chen, J. Lee, B. Lee Electrochemical Society
2 Conference Proceedings Identifying Performance-Critical Defects in the High-κ/Metal Gate Stacks G.i Bersuker, D. Hen, J. Price, A. Neugroschel, H. Tseng Electrochemical Society	8 Conference Proceedings High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society
3 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	9 Conference Proceedings Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks H. Watanabe, S. Yoshida, Y. Kita, T. Hosoi, T. Shimura Electrochemical Society
4 Conference Proceedings In-Situ Deposition of High-κ Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness R. Kambhampati, S. Koveshnikov, V. Tokranov, M. Yakimov, R. Moore Electrochemical Society	10 Conference Proceedings Evaluation of Nb(Si)N as Metal Gate Material N. Van Hoornick, H. De Witte, T. Hitters, C. Zhao, T. Canard, H. Huatori, J. Swerts, T. Schram, J. Maes, S. De Gendt, M. … Electrochemical Society
5 Conference Proceedings Oxygen Transfer from Metal Gate to High-κ Gate Dielectric Stack: Interface Structure & Property Changes J. Ha, H. AlShareef, J. Chambers, Y. Sun, P. Pianetta Electrochemical Society	11 Conference Proceedings Microscopic Understanding of PBTI and NBTI Mechanisms in High-κ / Metal Gate Stacks M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada Electrochemical Society
6 Conference Proceedings Interface Study in a “Metal / High-κ“ Gate Stack: Tantalum Nitride on Hafnium Oxide C. Gaumer, E. Martinez, S. Lhostis, C. Wiemer, M. Perego Electrochemical Society	12 Conference Proceedings Universal Correlation Between Mobility and NBTI on Advanced High-κ/Metal Gate Stacks G. Reimbold, X. Garros, M. Casse, M. Rafik, C. Leroux Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12