Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

Author(s):

Publication title:

Atomic layer deposition applications 3

Title of ser.:

ECS transactions

Ser. no.:

11(7)

Pub. Year:

2007

Page(from):

61

Page(to):

66

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775731 [1566775736]

Language:

English

Call no.:

E23400/11-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00052897
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.08-2007.10.09
Note for article:	3rd Symposium on Atomic Layer Deposition Applications, 212th Meeting of the Electrochemical Society, Hilton Washington, Washington, DC, October 8-9, 2007

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