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Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics 5
Title of ser.:
ECS transactions
Ser. no.:
11(4)
Pub. date:
2007
Page(from):
639
Page(to):
644
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775700 [1566775701]
Language:
English
Call no.:
E23400/11-4
Type:
Conference Proceedings

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