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Structural and Morphological Properties of Nitrogen Doped Polysilicon for Advanced Gate Material

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics 5
Title of ser.:
ECS transactions
Ser. no.:
11(4)
Pub. Year:
2007
Page(from):
601
Page(to):
606
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775700 [1566775701]
Language:
English
Call no.:
E23400/11-4
Type:
Conference Proceedings

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