Scaling Down of MOCVD HfSiON to 1nm EOT

Scaling Down of MOCVD HfSiON to 1nm EOT

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 5

Title of ser.:

ECS transactions

Ser. no.:

11(4)

Pub. Year:

2007

Page(from):

13

Page(to):

24

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775700 [1566775701]

Language:

English

Call no.:

E23400/11-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00049542
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 212th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2007.10.08-2007.10.10
Note for article:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

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