Scaling Down of MOCVD HfSiON to 1nm EOT
- Author(s):
- Publication title:
- Physics and technology of high-k gate dielectrics 5
- Title of ser.:
- ECS transactions
- Ser. no.:
- 11(4)
- Pub. Year:
- 2007
- Page(from):
- 13
- Page(to):
- 24
- Pages:
- 12
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775700 [1566775701]
- Language:
- English
- Call no.:
- E23400/11-4
- Type:
- Conference Proceedings
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