ALD Options for Si-integrated Ultrahigh-density Decoupling Capacitors in Pore and Trench Designs

ALD Options for Si-integrated Ultrahigh-density Decoupling Capacitors in Pore and Trench Designs

Author(s):

Publication title:

Atomic layer deposition applications 2

Title of ser.:

ECS transactions

Ser. no.:

3(15)

Pub. Year:

2007

Page(from):

173

Page(to):

181

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775427 [1566775426]

Language:

English

Call no.:

E23400/3-15

Type:

Conference Proceedings

Details

TDL ID:	ZA00047119
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.01
Note for article:	2nd Symposium on Atomic Layer Deposition Applications, 210th meeting of the Electrochemical Society, Moon Palace Resort, Cancun, Mexico, October 29 - November 1, 2006

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