Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Author(s):

R. Zhang ( AZ Electronic Materials, United States )
A. G. Timko ( AZ Electronic Materials, United States )
L. Pylneva ( AZ Electronic Materials, United States )
J. Loch ( AZ Electronic Materials, United States )
H. Wu ( AZ Electronic Materials, United States )

Publication title:

Lithography Asia 2008

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7140

Pub. Year:

2008

Vol.:

2

Page(from):

71402T-1

Page(to):

71402T-11

Pages:

11

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473813 [0819473812]

Language:

English

Call no.:

P63600/7140

Type:

Conference Proceedings

Details

TDL ID:	ZA00052771
Series ID:	PA00000029
Conf. info. (Name):	Lithography Asia
Conf. info. (Number):	2008
Conf. info. (Venue):	Taipei, Taiwan
Conf. info. (Date):	2008.11.04-2008.11.06
Note for article:	Lithography Asia 2008, 4-6 November 2008, Taipei, Taiwan - Advanced Materials, 71402T, 7140-102

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