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Analysis and simulation of process parameters for epitaxy of InP-based compound semiconductor materials

Author(s):
  • S. Zhong ( Beijing Univ. of Posts and Telecommunications, China )
  • X. Ren ( Beijing Univ. of Posts and Telecommunications, China )
  • Y. Huang ( Beijing Univ. of Posts and Telecommunications, China )
  • Q. Wang ( Beijing Univ. of Posts and Telecommunications, China )
  • H. Huang ( Beijing Univ. of Posts and Telecommunications, China )
Publication title:
Optoelectronic Materials and Devices III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
7135
Pub. Year:
2008
Vol.:
2
Page(from):
71353M-1
Page(to):
71353M-10
Pages:
10
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819473752 [0819473758]
Language:
English
Call no.:
P63600/7135
Type:
Conference Proceedings

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