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Improvement of leakage current and optical properties of GaN-based LEDs by chemical etching of p-GaN

Author(s):
  • T.-Y. Park ( Gwangju Institute of Science and Technology, United States )
  • C.-H. Cho ( Gwangju Institute of Science and Technology, United States )
  • I.-K. Park ( Gwangju Institute of Science and Technology, United States )
  • S.-J. Park ( Gwangju Institute of Science and Technology, United States )
Publication title:
Eighth International Conference on Solid State Lighting : 11-13 August 2008, San Diego, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
7058
Pub. Year:
2008
Page(from):
70580W-1
Page(to):
70580W-7
Pages:
7
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819472786 [0819472786]
Language:
English
Call no.:
P63600/7058
Type:
Conference Proceedings

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