Photomask technology for 32nm node and beyond

Photomask technology for 32nm node and beyond

Author(s):

R. Hikichi ( Dai Nippon Printing Co., Ltd., Japan )
H. Ishii ( Dai Nippon Printing Co., Ltd., Japan )
H. Migita ( Dai Nippon Printing Co., Ltd., Japan )
N. Kakehi ( Dai Nippon Printing Co., Ltd., Japan )
M. Shimizu ( Dai Nippon Printing Co., Ltd., Japan )

Publication title:

Photomask and next-generation lithography mask technology XV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7028

Pub. Year:

2008

Vol.:

1

Page(from):

702805-1

Page(to):

702805-12

Pages:

12

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472434 [0819472433]

Language:

English

Call no.:

P63600/7028

Type:

Conference Proceedings

Details

TDL ID:	ZA00052659
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next-Generation Lithography Mask Technology
Conf. info. (Number):	2008 : 15th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2008.04.16-2008.04.18
Note for article:	Photomask and next-generation lithography mask technology XV, 16-18 April 2008, Yokohama, Japan - Material for Photomask, 702805, 7028-04

Similar Items:

1 Conference Proceedings Noble development system to achieve defect-free process for 65nm node photomasks [5992-22] Sasaki, H., Sanki, S., Hikichi, R., Ogawa, K., Naito, A., Sato, Y., Kushida, Y., Ishiwata, N., Maruyama, H. SPIE - The International Society of Optical Engineering	7 Conference Proceedings Photomask quality assessment solution for 90-nm technology node Ohira, K., Chung, D.H.P., Nobuyuki, Y., Tateno, M., Matsumura, K., Chen, J.-H., Luk-Pat, G.T., Fukui, N., Tanaka, Y. SPIE - The International Society of Optical Engineering
2 Conference Proceedings Challenges in FEOL Logic Device Integration for 32 nm Technology Node and Beyond D. Park, M. Chudzik, H. Yin Electrochemical Society	8 Conference Proceedings Photomask blanks quality and functionality improvement challenges for the 130-nm node and beyond Kobayashi,H., Ushida,M., Ueno,K. SPIE-The International Society for Optical Engineering
3 Conference Proceedings MoSi absorber photomask for 32nm node T. Konishi, Y. Kojima, H. Takahashi, M. Tanabe, T. Haraguchi Society of Photo-optical Instrumentation Engineers	9 Conference Proceedings Nanomachining processes for 45, 32 nm node mask repair and beyond T. Robinson, A. Dinsdale, R. Bozak, R. White, M. Archuletta Society of Photo-optical Instrumentation Engineers
4 Conference Proceedings 45-32-nm node photomask technology with water immersion lithography [6349-134] Adachi, T., Inazuki, Y., Sutou, T., Morikawa, Y., Toyama, N., Mohri, H., Hayashi, N. SPIE - The International Society of Optical Engineering	10 Conference Proceedings The lithography technology for the 32 nm HP and beyond M. Dusa, B. Arnold, J. Finders, H. Meiling, K. van Ingen Schenau Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Advanced damage-free photomask cleaning for 45/32nm technology nodes R. Gouk, J. Jeon, F. Li, J. Papanu, B. Wu Society of Photo-optical Instrumentation Engineers	11 Conference Proceedings INVITED: A NEW JUNCTION TECHNOLOGY BASED ON SELECTIVE CVD OF SiGe ALLOYS FOR CMOS TECHNOLOGY NODES BEYOND 30 nm Oztiirk, M.C., Pesovic, N., Liu, J., Mo, H., Kang, I., Gannavaram, S. Electrochemical Society
6 Conference Proceedings PROVE: a photomask registration and overlay metrology system for the 45 nm node and beyond G. Klose, D. Beyer, M. Arnz, N. Kerwien, N. Rosenkranz Society of Photo-optical Instrumentation Engineers	12 Conference Proceedings INVITED: A NEW JUNCTION TECHNOLOGY BASED ON SELECTIVE CVD OF SiGe ALLOYS FOR CMOS TECHNOLOGY NODES BEYOND 30 nm Oztiirk, M.C., Pesovic, N., Liu, J., Mo, H., Kang, I., Gannavaram, S. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12