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Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths

Author(s):
  • A. Burenkov ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
  • C. Kampen ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
  • J. Lorenz ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
  • H. Ryssel ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
Publication title:
Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
7025
Pub. Year:
2008
Page(from):
70251J-1
Page(to):
70251J-12
Pages:
12
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819472380 [0819472387]
Language:
English
Call no.:
P63600/7025
Type:
Conference Proceedings

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