Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon

Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon

Author(s):

V. A. Sverdlov ( Technische Univ. Wien, Austria )
H. Kosina ( Technische Univ. Wien, Austria )
S. Selberherr ( Technische Univ. Wien, Austria )

Publication title:

Micro- and nanoelectronics 2007

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7025

Pub. date:

2008

Page(from):

70251I-1

Page(to):

70251I-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472380 [0819472387]

Language:

English

Call no.:

P63600/7025

Type:

Conference Proceedings

Details

TDL ID:	ZA00052656
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Micro- and Nanoelectronics - ICMNE
Conf. info. (Number):	2007
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2007.10.01-2007.10.05
Note for article:	Micro- and nanoelectronics 2007, 1-5 October 2007, Zvenigorod, Russia - Session 10. Simulation and Modeling, 70251I, 7025-53

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