Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Author(s):

G. I. Zebrev ( Moscow Engineering Physics Institute, Russia )
M. S. Gorbunov ( Moscow Engineering Physics Institute, Russia )
V. S. Pershenkov ( Moscow Engineering Physics Institute, Russia )

Publication title:

Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7025

Pub. Year:

2008

Page(from):

702517-1

Page(to):

702517-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472380 [0819472387]

Language:

English

Call no.:

P63600/7025

Type:

Conference Proceedings

Details

TDL ID:	ZA00052656
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Micro- and Nanoelectronics - ICMNE
Conf. info. (Number):	2007
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2007.10.01-2007.10.05
Note for article:	Micro- and nanoelectronics 2007, 1-5 October 2007, Zvenigorod, Russia - Session 8. Device Structures and ICs, 702517, 7025-42

Similar Items:

1 Conference Proceedings Compact physical modeling of fully depleted SOI MOSFET [6260-62] Zebrev, I. G., Gorbunov, S. M. SPIE - The International Society of Optical Engineering	7 Conference Proceedings Build-up and Annealing of Interface Traps under the Influence of Low-Dose- Rate Space Irradiation Taking into Account High-Frequency Gate Bias Switches Zebrev, Guennadiy, Pershenkov, Slava, Shvetzov-Shilovsky, Ivan, Morozov, Ivan, Ulimov, Victor, Emelyanov, Vladimir ESA Publication Division
2 Conference Proceedings Parasitic bipolar effect in modern SOI CMOS technologies V. E. Shunkov, M. S. Gorbunov, G. I. Zebrev, B. V. Vasilegin Society of Photo-optical Instrumentation Engineers	8 Conference Proceedings Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J.M. McGarrity Trans Tech Publications
3 Conference Proceedings Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs R. Green, A. Lelis, D. Urciuoli, M. Litz, J. Carroll Trans Tech Publications	9 Conference Proceedings Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Sailcide Buried Bitlines Torsten Mueller, C. Kleint, C. Fitz, M. Isler, S. Riedel, J.-U. Sachse, D. Olligs, H. Boubekeur, F. Heinrichsdorf, V. … Materiaeditors, Tingkai Li ... [et al.] ls Research Society
4 Conference Proceedings Nonequilibrium diagrammatic technique for nanoscale devices [6260-59] Zebrev, I. G. SPIE - The International Society of Optical Engineering	10 Conference Proceedings Analysis of Gate Leakage in Strained Si MOSFETs L. Yan, S.H. Olsen, M. Kanoun, M. Al-Araimi, R. Agaiby Electrochemical Society
5 Conference Proceedings Physical Model of Single Heavy Ion Induced Hard Errors Useinov, Rustem, Zebrev, Gennady, Emeliyanov, Vladimir, Pershenkov, Vyacheslav, Ulimov, Viktor ESA Publication Division	11 Conference Proceedings Charge trapping in polymer electroluminescent devices Campbell,A.J., Weaver,M.S., Bradley,D.D.C., Lidzey,D.G. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Impact of Radiation Induced Trapped Charge On N-Channel Depletion MOSFETs Gnana Prakash, A.P., Prashanth, K.C., Ganesh, Nagesha, Y.N., Umakanth, D., Siddappa, K. Electrochemical Society	12 Conference Proceedings Graphene nanoelectronics: electrostatics and kinetics G. I. Zebrev Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12