Study of the defects in GaN epitaxial films grown on sapphire by HVPE
- Author(s):
- Publication title:
- Sixth International Conference on Thin Film Physics and Applications : 25-28 September 2007, Shanghai, China
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6984
- Pub. Year:
- 2008
- Page(from):
- 698423-1
- Page(to):
- 698423-4
- Pages:
- 4
- Pub. info.:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819471826 [0819471828]
- Language:
- English
- Call no.:
- P63600/6984
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Photoreflectance Study of GaN Film Grown by Metalorganic Chemical Vapor Deposition
MRS - Materials Research Society |
2
Conference Proceedings
Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
10
Conference Proceedings
A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates
MRS-Materials Research Society |
Trans Tech Publications |
11
Conference Proceedings
Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AIN Templates
Materials Research Society |