Blank Cover Image

Litho variations and their impact on the electrical yield of a 32nm node 6T SRAM cell

Author(s):
Publication title:
Design for manufacturability through design-process integration II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6925
Pub. date:
2008
Page(from):
69250R-1
Page(to):
69250R-12
Pages:
12
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819471109 [0819471100]
Language:
English
Call no.:
P63600/6925
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Lithography and yield sensitivity analysis of SRAM scaling for the 32nm node

A. Nackaerts, S. Verhaegen, M. Dusa, H. Kattouw, F. van Bilsen, S. Biesemans, G. Vandenberghe

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Extending immersion lithography to the 32-nm node

S. Warrick, W. Conley, V. Farys, M. Benndorf, J. Gemmink, Y. Trouiller, J. Belledent, D. Jovanovic, P. Gouraud

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Optical extensions integration for a 0.314-μm2 45-nm node 6-transistor SRAM cell

Verhaegen, S., Nackaerts, A., Wiaux, V., Hendrickx, E., Vandenberghe, G.

SPIE - The International Society of Optical Engineering
8 Conference Proceedings 157-nm lithography for 65-nm node SRAM-gate

Suganaga, T., Irie, S., Miyoshi, S., Kim, J.-H., Watanabe, K., Kurose, E., Furukawa, T., Hagiwara, T., Ishimaru, T., …

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Double patterning design split implementation and validation for the 32nm node

M. Drapeau, V. Wiaux, E. Hendrickx, S. Verhaegen, T. Machida

SPIE - The International Society of Optical Engineering
9 Conference Proceedings Analysis of the impact of reticle CD variations on the available process windows for a 100-nm CMOS process

Verhaegen, S., Vandenberghe, G., Jonckheere, R.M., Ronse, K.G.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Compensating measured intra-wafer ring oscillator stage delay with intra-wafer exposure dose corrections [6152-71]

Verhaegen, S., Nackaerts, A., Dusa, M., Carpaij, R., Vandenberghe, G., Finders, J.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

S. Mimotogi, F. Uesawa, M. Tominaga, H. Fujise, K. Sho, M. Katsumata, H. Hane, A. Ikegami, S. Nagahara, T. Ema, M. …

SPIE - The International Society of Optical Engineering
5 Conference Proceedings A 65-nm node SRAM solution using alt-PSM with ArF lithography

Driessen, F.A., Zawadzki, M.T., Krishnan, P.R., Balasinski, A., Vandenberghe, G.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Litho-aware extraction for the 32nm double patterning node

J. Huckabay, Q. Chen, C. Thayer, R. Naber

Society of Photo-optical Instrumentation Engineers
6 Conference Proceedings Contact and via hole mask design optimization for 65-nm technology node

Van Den Broeke, D., Shi, X., Socha, R., Laidig, T., Hollerbach, U., Wampler, K. E., Hsu, S., Chen, J. F., Corcoran, N. …

SPIE - The International Society of Optical Engineering
12 Conference Proceedings Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography

Park, J.-S., Kim, S.-H., Shin, I.-K., Choi, S.-W., Sohn, J.-M., Lee, J.-H., Shin, H.-S., Laidig, T.L., Van den Broeke, …

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12