Optimum biasing for 45 nm node chromeless and attenuated phase shift mask
- Author(s):
- Y.-M. Kang ( Hanyang Univ., South Korea )
- H.-K. Oh ( Hanyang Univ., South Korea )
- Publication title:
- Optical Microlithography XXI
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6924
- Pub. Year:
- 2008
- Vol.:
- 2
- Page(from):
- 692433-1
- Page(to):
- 692433-9
- Pages:
- 9
- Pub. info.:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819471093 [0819471097]
- Language:
- English
- Call no.:
- P63600/6924
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask
Society of Photo-optical Instrumentation Engineers |
7
Conference Proceedings
Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era
Society of Photo-optical Instrumentation Engineers |
2
Conference Proceedings
Acid diffusion length dependency for 32-nm node attenuated and chromeless phase shift mask
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Comparative study of chromeless and attenuated phase shift mask for 0.3-k1 ArF lithography of DRAM
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
6
Conference Proceedings
Mask design optimization for 70-nm technology node using chromeless phase lithography (CPL) based on 100% transmission phase-shifting mask
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography
SPIE-The International Society for Optical Engineering |