Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rote in a 45nm production environment

Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rote in a 45nm production environment

Author(s):

Y. Sato ( Toshiba Corp., Japan )
Y. Yamada ( Toshiba Corp., Japan )
Y. Koga ( Toshiba Corp., Japan )
Y. Yamazaki ( Toshiba Corp., Japan )
M. Aoki ( KLA-Tencor Corp., USA )

Publication title:

Metrology, inspection, and process control for microlithography XXII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6922

Pub. Year:

2008

Vol.:

1

Page(from):

692213-1

Page(to):

692213-9

Pages:

9

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471079 [0819471070]

Language:

English

Call no.:

P63600/6922

Type:

Conference Proceedings

Details

TDL ID:	ZA00052553
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2008 : 22nd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.02.25-2008.02.28
Note for article:	Metrology, inspection, and process control for microlithography XXII, San Jose, California, USA, 25-28 February 2008 - Session 8. Inspection and Defect (692213/6922-37)

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